Datasheet4U Logo Datasheet4U.com

BU2522AX - Silicon Diffused Power Transistor

Description

New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors.

Features

  • improved RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors. QUICK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BU2522AX SILICON POWER TRANSISTOR SavantIC
BU2522AX NPN Transistor INCHANGE
BU2522A SILICON POWER TRANSISTOR SavantIC
BU2522AF NPN Transistor INCHANGE
BU2522AF SILICON POWER TRANSISTOR SavantIC

Other Datasheets by NXP Semiconductors

Part Number Description
BU2522A Silicon Diffused Power Transistor
BU2522AF Silicon Diffused Power Transistor
BU2522AW Silicon Diffused Power Transistor
BU2522DF Silicon Diffused Power Transistor
BU2522DX Silicon Diffused Power Transistor

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 6.0 0.16 MAX. 1500 800 10 25 45 5.0 0.
Published: |