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BSP92 - P-channel enhancement mode vertical D-MOS transistor

Description

P-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a surface-mounted device in line current interruptor in telephone sets and for application in relay, high speed and line transformer drivers.

Features

  • Low threshold voltage VGS(th).
  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BSP92 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES • Low threshold voltage VGS(th) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a surface-mounted device in line current interruptor in telephone sets and for application in relay, high speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain Fig.1 Simplified outline (SOT223) and symbol.
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