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BSN304A - N-channel enhancement mode vertical D-MOS transistors

Description

N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.

Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BSN304; BSN304A N-channel enhancement mode vertical D-MOS transistors Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistors FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
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