Datasheet4U Logo Datasheet4U.com

BSH301 - Dual N-channel enhancement mode MOS transistor

Description

Two N-channel enhancement mode MOS transistors in an 8-pin plastic TSSOP8 package.

Features

  • 40 mΩ on-state resistance at 2.5 V gate drive.
  • RDSon rating down to 1.8 V.
  • ESD gate protection.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSH103 N-Channel MOSFET VBsemi
BSH111 N-Channel MOSFET NXP Semiconductors
BSH111BK N-Channel MOSFET nexperia
BSH114 N-Channel MOSFET VBsemi
BSH201 P-Channel 60V MOSFET VBsemi

Other Datasheets by NXP Semiconductors

Part Number Description
BSH101 N-channel enhancement mode MOS transistor
BSH102 N-channel enhancement mode MOS transistor
BSH103 N-channel enhancement mode MOS transistor
BSH104 N-channel enhancement mode MOS transistor
BSH105 N-channel enhancement mode MOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET BSH301 Dual N-channel enhancement mode MOS transistor Objective specification 1999 Apr 06 Philips Semiconductors Objective specification Dual N-channel enhancement mode MOS transistor FEATURES • 40 mΩ on-state resistance at 2.5 V gate drive • RDSon rating down to 1.8 V • ESD gate protection. APPLICATIONS • Li-Ion safety switch • Power management. DESCRIPTION Two N-channel enhancement mode MOS transistors in an 8-pin plastic TSSOP8 package. PINNING SOT530 (TSSOP8) PIN 1 2 3 4 5 6 7 8 SYMBOL d1 s1 s1 g1 g2 s2 s2 d1 DESCRIPTION drain 1 source 1 source 1 gate 1 gate 2 source 2 source 2 drain 1 1 4 MAM423 BSH301 8 handbook, halfpage 5 d1 s2 s2 g2 d1 s1 s1 g1 Fig.1 Simplified outline (SOT530) and symbol.
Published: |