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BSH299 - P-channel enhancement mode MOS transistor

Description

DESCRIPTION P-channel enhancement mode MOS transistor in a SOT363 SMD package.

CAUTION The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Features

  • Low threshold voltage.
  • High-speed switching.
  • No secondary breakdown.
  • Direct interface to C-MOS, TTL, etc.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BSH299 P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor FEATURES • Low threshold voltage • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL, etc. APPLICATIONS • Power management • Battery powered applications e.g. cellular phones • General purpose switch. handbook, halfpage BSH299 PINNING - SOT363 PIN 1 2 3 4 5 6 SYMBOL d d g s d d DESCRIPTION drain drain gate source drain drain 6 5 4 d DESCRIPTION P-channel enhancement mode MOS transistor in a SOT363 SMD package. 1 2 3 MAM396 g s CAUTION The device is supplied in an antistatic package.
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