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BSH121 - N-channel enhancement mode field-effect transistor

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability: BSH121 in SOT323.

2.

Features

  • s s s s TrenchMOS™ technology Very fast switching Low threshold voltage Subminiature surface mount package. 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSH121 N-channel enhancement mode field-effect transistor Rev. 01 — 14 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH121 in SOT323. 2. Features s s s s TrenchMOS™ technology Very fast switching Low threshold voltage Subminiature surface mount package. 3. Applications s Battery management s High speed switch s Logic level translator. c c 4. Pinning information Table 1: Pin 1 2 3 Pinning - SOT323, simplified outline and symbol Description gate (g) 3 d Simplified outline Symbol source (s) drain (d) g 1 Top view 2 MBC870 s 03ab30 SOT323 N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics.
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