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BSD22 - MOSFET N-channel depletion switching transistor

Description

Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type.The transistor is sealed in a SOT143 envelope and

Features

  • a low ON-resistance and low capacitances. The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate.

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DISCRETE SEMICONDUCTORS DATA SHEET BSD22 MOSFET N-channel depletion switching transistor Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification MOSFET N-channel depletion switching transistor DESCRIPTION Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type.The transistor is sealed in a SOT143 envelope and features a low ON-resistance and low capacitances.The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate. Applications: • analog and/or digital switch • switch driver • convertor • chopper PINNING 1 2 3 4 = substrate (b) = source = drain = gate Fig.1 Simplified outline and symbol.
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