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BLF4G20LS-110B - UHF power LDMOS transistor

Description

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Features

  • s Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 650 mA: x Load power = 48 W (AV) x Gain = 13.8 dB (typ) x Efficiency = 38.5 % (typ) x ACPR400 =.
  • 61 dBc (typ) x ACPR600 =.
  • 74 dBc (typ) x EVMrms = 2.1 % (typ) s Easy power control s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use Philips Semiconductors BLF4.

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www.DataSheet4U.com BLF4G20LS-110B UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance f = 1930 MHz to 1990 MHz; Tcase = 25 °C; IDq = 650 mA; unless otherwise specified; in a class-AB production test circuit; typical values Mode of operation CW GSM EDGE [1] [2] VDS (V) 28 28 PL (W) 100 48 (AV) Gp (dB) 13.4 13.8 ηD (%) 49 38.5 ACPR400 (dBc) −61 [1] ACPR600 (dBc) −74 [2] EVMrms (%) 2.1 ACPR400 at 30 kHz resolution bandwidth. ACPR600 at 30 kHz resolution bandwidth. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
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