Datasheet Details
| Part number | BLF277 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 101.84 KB |
| Description | VHF power MOS transistor |
| Datasheet |
 BLF277 Datasheet
|
|
|
Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.
The transistor is encapsulated in a 6-lead, SOT119 flange envelope, with a ceramic cap.
All leads are isolated from the flange.
Features
- High power gain.
- Easy power control.
- Gold metallization ensures excellent reliability.
- Good thermal stability.
- Withstands full load mismatch.