Datasheet4U Logo Datasheet4U.com

BLF247B - VHF push-pull power MOS transistor

Description

Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in a 4-lead, SOT262A1 balanced flange type package with two ceramic caps.

The mounting flange provides the common source connection for the transistor.

Features

  • High power gain.
  • Easy power control.
  • Good thermal stability.
  • Withstands full load mismatch.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLF242 HF-VHF POWER MOSFET ASI
BLF2425M6L180P Power LDMOS transistor Ampleon
BLF2425M6LS180P Power LDMOS transistor Ampleon
BLF2425M7L100 Power LDMOS transistor Ampleon
BLF2425M7L140 Power LDMOS transistor Ampleon

Other Datasheets by NXP Semiconductors

Part Number Description
BLF242 HF/VHF power MOS transistor
BLF2425M6L180P Power LDMOS transistor
BLF2425M6LS180P Power LDMOS transistor
BLF2425M7L100 Power LDMOS transistor
BLF2425M7L140 Power LDMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET BLF247B VHF push-pull power MOS transistor Product specification August 1994 Philips Semiconductors Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES • High power gain • Easy power control • Good thermal stability • Withstands full load mismatch. APPLICATIONS • Large signal applications in the VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in a 4-lead, SOT262A1 balanced flange type package with two ceramic caps. The mounting flange provides the common source connection for the transistor. PINNING - SOT262A1 PIN 1 2 3 4 5 DESCRIPTION drain 1 drain 2 gate 1 gate 2 source Fig.1 Simplified outline and symbol.
Published: |