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BLF244 - VHF power MOS transistor

Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.

The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap.

All leads are isolated from the flange.

Features

  • High power gain.
  • Low noise figure.
  • Easy power control.
  • Good thermal stability.
  • Withstands full load mismatch.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Philips Semiconductors VHF power MOS transistor Product specification BLF244 FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability • Withstands full load mismatch • Gold metallization ensures excellent reliability. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. PINNING - SOT123A PIN DESCRIPTION 1 drain 2 source 3 gate 4 source PIN CONFIGURATION handbook, halfpage 1 2 4 3 MSB057 d g MBB072 s Fig.1 Simplified outline and symbol.
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