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BLF2425M9LS30 - Power LDMOS transistor

Download the BLF2425M9LS30 datasheet PDF. This datasheet also covers the BLF2425M9L30 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applications and are assembled in a high performance ceramic package.

Table 1.

Features

  • High efficiency.
  • High power gain.
  • Excellent ruggedness.
  • Excellent thermal stability.
  • Integrated ESD protection.
  • Designed for broadband operation (2400 MHz to 2500 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF2425M9L30-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by NXP Semiconductors

Part Number Description
BLF2425M9L30 Power LDMOS transistor
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Full PDF Text Transcription

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BLF2425M9L30; BLF2425M9LS30 Power LDMOS transistor Rev. 1 — 3 June 2015 Objective data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applications and are assembled in a high performance ceramic package. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) CW 2450 32 30 18.5 D (%) 61 1.
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