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BLF225 - VHF power MOS transistor

Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the VHF frequency range.

The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap.

All leads are isolated from the flange.

Features

  • Easy power control.
  • Good thermal stability.
  • Withstands full load mismatch.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLF225 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES • Easy power control • Good thermal stability • Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION g MBB072 BLF225 PIN CONFIGURATION k, halfpage 1 4 d s 2 3 MSB057 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package.
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