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BLC6G22-130 - UHF power LDMOS transistor

Description

130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Features

  • s Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 30 W (AV) x Gain = 16 dB x Efficiency = 31 % x IMD3 =.
  • 37 dBc x ACPR =.
  • 40 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (2000 MHz to 2200 MHz) s Internally matched for ease of use www. DataSheet4U. com Philips Semiconductors BL.

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Full PDF Text Transcription

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www.DataSheet4U.com BLC6G22-130; BLC6G22LS-130 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) Gp (W) 30 (dB) 16 ηD (%) 31 IMD3 ACPR (dBc) (dBc) −37 [1] −40 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
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