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BLC6G10LS-160 - UHF power LDMOS transistor

Download the BLC6G10LS-160 datasheet PDF. This datasheet also covers the BLC6G10-160 variant, as both devices belong to the same uhf power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Features

  • I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA: N Average output power = 32 W N Power gain = 23 dB N Efficiency = 28 % N ACPR =.
  • 40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLC6G10-160_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by NXP Semiconductors

Part Number Description
BLC6G10LS-200 UHF power LDMOS transistor
BLC6G10-160 UHF power LDMOS transistor
BLC6G10-200 UHF power LDMOS transistor
BLC6G20-110 UHF power LDMOS transistor
BLC6G20-75 UHF power LDMOS transistor

Full PDF Text Transcription

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www.DataSheet4U.com BLC6G10-160; BLC6G10LS-160 UHF power LDMOS transistor Rev. 01 — 12 May 2006 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 32 PL(AV) (W) 32 Gp (dB) 23 ηD (%) 28 ACPR (dBc) −40[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
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