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BGY925 - UHF amplifier

Description

The BGY925 is a three-stage UHF amplifier module in a SOT365A package.

It consists of one NPN silicon planar transistor die and two silicon MOSFET dies mounted on a metallized ceramic AlN substrate, together with matching and bias circuitry.

Features

  • 26 V nominal supply voltage.
  • 23 W output power into a load of 50 Ω with an RF drive power of 36 mW.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D167 BGY925 UHF amplifier module Product specification Supersedes data of 1999 Dec 01 2000 Feb 02 Philips Semiconductors Product specification UHF amplifier module FEATURES • 26 V nominal supply voltage • 23 W output power into a load of 50 Ω with an RF drive power of 36 mW. APPLICATIONS • Base station transmitting equipment operating in the 920 to 960 MHz frequency range. DESCRIPTION The BGY925 is a three-stage UHF amplifier module in a SOT365A package. It consists of one NPN silicon planar transistor die and two silicon MOSFET dies mounted on a metallized ceramic AlN substrate, together with matching and bias circuitry.
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