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BGY122B - UHF amplifier

Description

The BGY122A and BGY122B are three-stage UHF amplifier modules in a SOT388B package.

Each module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate.

Features

  • Single 4.8 V nominal supply voltage.
  • 1.2 W output power.
  • Easy control of output power by DC voltage.
  • Very high efficiency (typ. 55%).
  • Silicon bipolar technology.
  • Standby current less than 100 µA.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET M3D369 BGY122A; BGY122B UHF amplifier modules Product specification Supersedes data of 1997 Dec 01 1998 May 11 Philips Semiconductors Product specification UHF amplifier modules FEATURES • Single 4.8 V nominal supply voltage • 1.2 W output power • Easy control of output power by DC voltage • Very high efficiency (typ. 55%) • Silicon bipolar technology • Standby current less than 100 µA. APPLICATIONS • Hand-held transmitting equipment operating in the 824 to 849 MHz and 872 to 905 MHz frequency ranges. DESCRIPTION The BGY122A and BGY122B are three-stage UHF amplifier modules in a SOT388B package. Each module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate.
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