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BGS8M2 - amplifier MMIC

Datasheet Summary

Description

The BGS8M2 is, also known as the LTE3001M, a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package.

The BGS8M2 requires one external matching inductor.

Features

  • Operating frequency from 1805 MHz to 2200 MHz.
  • Noise figure = 0.85 dB.
  • Gain 14.4 dB.
  • High input 1 dB compression point of -3.5 dBm.
  • Bypass switch insertion loss of 2.2 dB.
  • High in band IP3i of 3.5 dBm.
  • Supply voltage 1.5 V to 3.1 V.
  • Self-shielding package concept.
  • Integrated supply decoupling capacitor.
  • Optimized performance at a supply current of 5.8 mA.
  • Power-down mode current consumption < 1 µA.

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Datasheet Details

Part number BGS8M2
Manufacturer NXP
File Size 215.96 KB
Description amplifier MMIC
Datasheet download datasheet BGS8M2 Datasheet
Additional preview pages of the BGS8M2 datasheet.

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Full PDF Text Transcription

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BGS8M2 SiGe:C low-noise amplifier MMIC with bypass switch for LTE Rev. 5 — 20 August 2018 Product data sheet XSON6 1 General description The BGS8M2 is, also known as the LTE3001M, a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGS8M2 requires one external matching inductor. The BGS8M2 delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of these low noise devices ensures the required receive sensitivity independent of cellular transmit power level in FDD (Frequency Division Duplex) systems.
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