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BGF944 - GSM900 EDGE power module

Description

17 W LDMOS power amplifier module for base station amplifier applications in the 920 to 960 MHz band.

QUICK REFERENCE DATA Typical RF performance at Tmb = 25 °C.

MODE OF OPERATION CW GSM EDGE Note 1.

Features

  • Typical GSM EDGE performance at a supply voltage of 26 V:.
  • Output power = 2.5 W.
  • Gain = 29 dB.
  • Efficiency = 15%.
  • ACPR <.
  • 65 dBc at 400 kHz.
  • rms EVM < 0.4%.
  • peak EVM < 1.2%.
  • Low distortion to a GSM EDGE signal.
  • Excellent 2-tone performance.
  • Low die temperature due to copper flange.
  • Integrated temperature compensated bias.
  • 50 Ω input/output impedance.
  • Flat gain over frequen.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM900 EDGE power module FEATURES • Typical GSM EDGE performance at a supply voltage of 26 V: – Output power = 2.5 W – Gain = 29 dB – Efficiency = 15% – ACPR < −65 dBc at 400 kHz – rms EVM < 0.4% – peak EVM < 1.2% • Low distortion to a GSM EDGE signal • Excellent 2-tone performance • Low die temperature due to copper flange • Integrated temperature compensated bias • 50 Ω input/output impedance • Flat gain over frequency band.
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