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BGD702N - 750 MHz/ 18.5 dB gain power doubler amplifier

Description

Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC).

Fig.1 Simplified outline.

Features

  • Excellent linearity.
  • Extremely low noise.
  • Silicon nitride passivation.
  • Rugged construction.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD702N 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. APPLICATIONS • CATV systems operating in the 40 to 750 MHz frequency range. DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC). PINNING - SOT115J PIN 1 2 3 5 7 8 9 input common common +VB common common output BGD702N DESCRIPTION handbook, halfpage 1 2 3 8 5 7 9 Side view MSA319 Fig.1 Simplified outline.
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