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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BFY50; BFY51; BFY52 NPN medium power transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22
Philips Semiconductors
Product specification
NPN medium power transistors
FEATURES • High current (max. 1 A) • Low voltage (max. 35 V). APPLICATIONS • General purpose industrial applications. DESCRIPTION NPN medium power transistor in a TO-39 metal package.
1 handbook, halfpage 2
BFY50; BFY51; BFY52
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION
3 2
3
MAM317
1
Fig.1 Simplified outline (TO-39) and symbol.