Click to expand full text
BFU520Y
Dual NPN wideband silicon RF transistor
Rev. 1 — 20 February 2014
Product data sheet
1. Product profile
1.1 General description
Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package.
The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.65 dB at 900 MHz Maximum stable gain 19 dB at 900 MHz 11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages Broadband differential amplifiers up to 2 GHz Low noise amplifiers for ISM applications ISM band oscillators
1.
BFU520Y Datasheet
