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DISCRETE SEMICONDUCTORS
DATA SHEET
BFS520 NPN 9 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz. PINNING PIN 1 2 3 base emitter collector DESCRIPTION Code: N2
Top view 1
BFS520
handbook, 2 columns
3
2
MBC870
Fig.1 SOT323.