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BFQ270 - NPN 6 GHz wideband transistor

Description

Silicon NPN transistor mounted in a 4-lead dual-emitter SOT172A1.

envelope with a ceramic cap.

All leads are isolated from the mounting base.

Features

  • High power gain.
  • Emitter-ballasting resistors for good thermal stability.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures excellent reliability. DESCRIPTION Silicon NPN transistor mounted in a 4-lead dual-emitter SOT172A1. envelope with a ceramic cap. All leads are isolated from the mounting base. It is primarily intended for use in MATV and CATV amplifiers.
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