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BFM520 - Dual NPN wideband transistor

Description

DESCRIPTION Dual transistor with two silicon NPN RF dies in a surface mount 6-pin SOT363 (S-mini) package.

Features

  • Small size.
  • Temperature and hFE matched.
  • Low noise and high gain.
  • High gain at low current and low capacitance at low voltage.
  • Gold metallization ensures excellent reliability.

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BFM505 Dual NPN wideband transistor

Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BFM520 Dual NPN wideband transistor Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14 1996 Oct 08 Philips Semiconductors Product specification Dual NPN wideband transistor FEATURES • Small size • Temperature and hFE matched • Low noise and high gain • High gain at low current and low capacitance at low voltage • Gold metallization ensures excellent reliability. APPLICATIONS • Oscillator and buffer amplifiers • Balanced amplifiers • LNA/mixers.
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