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BF909R - N-channel dual gate MOS-FET

This page provides the datasheet information for the BF909R, a member of the BF909 N-channel dual gate MOS-FET family.

Datasheet Summary

Description

Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package.

Features

  • Specially designed for use at 5 V supply voltage.
  • High forward transfer admittance.
  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier up to 1 GHz.
  • Superior cross-modulation performance during AGC. transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

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Datasheet preview – BF909R

Datasheet Details

Part number BF909R
Manufacturer NXP
File Size 306.51 KB
Description N-channel dual gate MOS-FET
Datasheet download datasheet BF909R Datasheet
Additional preview pages of the BF909R datasheet.

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Full PDF Text Transcription

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NXP Semiconductors N-channel dual gate MOS-FETs Product specification BF909; BF909R FEATURES • Specially designed for use at 5 V supply voltage • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
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