Datasheet4U Logo Datasheet4U.com

BF861B - N-channel junction FETs

Description

N-channel symmetrical junction field effect transistors in a SOT23 package.

The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Features

  • High transfer admittance.
  • Low feedback capacitance.
  • Low input capacitance.
  • Low noise. 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BF869 (BF869 / BF881) NPN Silicon Transistors Siemens Semiconductor
BF801M SMD Gas Discharge Tube LangTuo
BF820 NPN High-Voltage Transistors GME
BF820 Small Signal Transistors General Semiconductor
BF820 Silicon NPN transistor BLUE ROCKET ELECTRONICS

Other Datasheets by NXP Semiconductors

Part Number Description
BF861A N-channel junction FETs
BF861C N-channel junction FETs
BF862 N-channel junction FET
BF869 NPN high-voltage transistors
BF819 NPN high-voltage transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SOT23 BF861A; BF861B; BF861C N-channel junction FETs Rev. 5 — 15 September 2011 Product data sheet 1. Product profile CAUTION 1.1 General description N-channel symmetrical junction field effect transistors in a SOT23 package. The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. MSC895 1.2 Features and benefits  High transfer admittance  Low feedback capacitance  Low input capacitance  Low noise. 1.3 Applications  Preamplifiers for AM tuners in car radios. 1.4 Quick reference data Table 1.
Published: |