Click to expand full text
DISCRETE SEMICONDUCTORS
DATA SHEET
BF763 NPN 2 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
DESCRIPTION NPN transistor in a plastic SOT54 (TO-92 variant) envelope. It is primarily intended for use in RF amplifiers and oscillators. PINNING PIN 1 2 3 DESCRIPTION Code: F763 emitter base collector
1 2 3
BF763
MSB034
Fig.1 SOT54.
QUICK REFERENCE DATA SYMBOL V(BR)CEO IC Ptot hFE fT PARAMETER collector-emitter breakdown voltage open base DC collector current total power dissipation DC current gain transition frequency up to Tamb = 60 °C IC = 5 mA; VCE = 10 V; Tj = 25 °C CONDITIONS MIN. 15 − − 25 TYP. − − − − 1.8 MAX.