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BF510 - N-channel silicon field-effect transistors

Description

Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f.

range in hybrid thick and thin-film circuits.

Features

  • are the low feedback capacitance and the low noise figure. These features make the product very suitable for.

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Other Datasheets by NXP Semiconductors

Part Number Description
BF511 N-channel silicon field-effect transistors
BF512 N-channel silicon field-effect transistors
BF513 N-channel silicon field-effect transistors
BF545A N-channel silicon junction field-effect transistors
BF545B N-channel silicon junction field-effect transistors

Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios (BF511) and mains radios (BF512) or the mixer stage (BF513).
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