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BF410D - N-channel silicon field-effect transistors

General Description

Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range.

These FETs can be supplied in four IDSS groups.

Key Features

  • are the low feedback capacitance and the low noise figure. Thanks to these special features the BF410 is very suitable for.

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Full PDF Text Transcription for BF410D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BF410D. For precise diagrams, and layout, please refer to the original PDF.

DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1990 Phil...

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ecification File under Discrete Semiconductors, SC07 December 1990 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks to these special features the BF410 is very suitable for applications such as the RF stages in FM portables (type A), car radios (type B) and mains radios (type C) or the mixer stage (ty

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Siemens Semiconductor Group Logo BF410D LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Siemens Semiconductor Group
Siemens Semiconductor Group Logo BF410 LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Siemens Semiconductor Group
Siemens Semiconductor Group Logo BF410A LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Siemens Semiconductor Group
Siemens Semiconductor Group Logo BF410B LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Siemens Semiconductor Group
Siemens Semiconductor Group Logo BF410C LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Siemens Semiconductor Group

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