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BF1109 - N-channel dual-gate MOS-FETs

Description

BF1109R marking code: NBp.

Simplified outline (SOT143R).

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.

Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier up to 1 GHz.
  • Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

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Other Datasheets by NXP Semiconductors

Part Number Description
BF1109R N-channel dual-gate MOS-FETs
BF1109WR N-channel dual-gate MOS-FETs
BF1100 Dual-gate MOS-FETs
BF1100R Dual-gate MOS-FETs
BF1100WR Dual-gate MOS-FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS • VHF and UHF applications with 9 V supply voltage, such as television tuners and professional communications equipment.
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