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BF1108R - Silicon RF switches

Description

These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package.

The low loss and high isolation capabilities of these devices provide excellent RF switching functions.

Features

  • I Specially designed for low loss RF switching up to 1 GHz 1.3.

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Other Datasheets by NXP Semiconductors

Part Number Description
BF1108 Silicon RF switches
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008 Product data sheet 1. Product profile CAUTION 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
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