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BF1107 - N-channel single gate MOS-FETs

Description

The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively.

The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions.

Features

  • Currentless RF switch.

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Other Datasheets by NXP Semiconductors

Part Number Description
BF1107W N-channel single gate MOS-FETs
BF1100 Dual-gate MOS-FETs
BF1100R Dual-gate MOS-FETs
BF1100WR Dual-gate MOS-FET
BF1101 N-channel dual-gate MOS-FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BF1107; BF1107W N-channel single gate MOS-FETs Product specification Supersedes data of 1998 Jun 22 1999 May 14 Philips Semiconductors Product specification N-channel single gate MOS-FETs FEATURES • Currentless RF switch. APPLICATIONS • Various RF switching applications such as: - Passive loop through for VCR tuner - Transceiver switching. DESCRIPTION The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively. The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. Drain and source are interchangeable.
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