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BDP31 - NPN medium power transistor

Description

NPN medium power transistor in a SOT223 plastic package.

PNP complement: BDP32.

Fig.1 Simplified outline (SOT223) and symbol.

Features

  • High current (max. 3 A).
  • Low voltage (max. 45 V).

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Other Datasheets by NXP Semiconductors

Part Number Description
BDP32 PNP medium power transistor

Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BDP31 NPN medium power transistor Product specification Supersedes data of 1997 Mar 10 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistor FEATURES • High current (max. 3 A) • Low voltage (max. 45 V). APPLICATIONS • General purpose medium power applications. DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complement: BDP32. handbook, halfpage BDP31 PINNING PIN 1 2,4 3 base collector emitter DESCRIPTION 4 2, 4 1 3 1 Top view 2 3 MAM287 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
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