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DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D088
BCV27; BCV47 NPN Darlington transistors
Product specification Supersedes data of 1997 Sep 04 1999 Apr 08
Philips Semiconductors
Product specification
NPN Darlington transistors
FEATURES • Medium current (max. 500 mA) • Low voltage (max. 60 V) • High DC current gain (min. 20000). APPLICATIONS • Preamplifier input applications. DESCRIPTION NPN Darlington transistor in a SOT23 plastic package. PNP complements: BCV26 and BCV46. MARKING
1 2
BCV27; BCV47
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
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3
1
3
TR1 TR2 2
MAM298
TYPE NUMBER BCV27 BCV47 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia.
MARKING CODE(1) FF∗ FG∗
Top view
Fig.1 Simplified outline (SOT23) and symbol.