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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BCV26; BCV46 PNP Darlington transistors
Product specification Supersedes data of 1997 Apr 23 1999 Apr 08
Philips Semiconductors
Product specification
PNP Darlington transistors
FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • Very high DC current gain (min. 10000). APPLICATIONS • Where very high amplification is required. DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. MARKING
1 2
BCV26; BCV46
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
handbook, halfpage
3
1
3
TR1 TR2 2
MAM299
TYPE NUMBER BCV26 BCV46 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia.
MARKING CODE(1) FD∗ FE∗
Top view
Fig.1 Simplified outline (SOT23) and symbol.