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BAW62 - High-speed diode

General Description

The BAW62 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package.

The diode is type branded.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

Key Features

  • Hermetically sealed leaded glass SOD27 (DO-35) package.
  • High switching speed: max. 4 ns.
  • Continuous reverse voltage: max. 75 V.
  • Repetitive peak reverse voltage: max. 75 V.
  • Repetitive peak forward current: max. 450 mA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAW62 High-speed diode Product data sheet Supersedes data of April 1996 1996 Sep 17 NXP Semiconductors High-speed diode Product data sheet BAW62 FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 75 V • Repetitive peak forward current: max. 450 mA. APPLICATIONS • High-speed switching • Fast logic applications. DESCRIPTION The BAW62 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. handbook, halfpagke a MAM246 The diode is type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol.