BAV23C
description
Dual high-voltage switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number
Package
BAV23A
SOT23
SOT23
BAV23S
SOT23
BAV23
SOT143B
JEDEC TO-236AB TO-236AB TO-236AB
- Configuration dual mon anode dual mon cathode dual series dual isolated
1.2 Features and benefits
- High switching speed: trr 50 ns
- Low leakage current
- Repetitive peak reverse voltage:
VRRM 250 V
- Low capacitance: Cd 2 p F
- Small SMD plastic package
1.3 Applications
- High-speed switching at high voltage
- High-voltage general-purpose switching
1.4 Quick reference data
Table 2. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time
Conditions VR = 200 V
Min Typ
[1]
- -
[1] When switched from IF = 10 m A to IR = 10 m A; RL = 100 ; measured at IR = 1 m A.
Max
100 200 50
Unit n A V ns
NXP Semiconductors
2. Pinning information
Table 3. Pin BAV23A...
