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BAT56 - Schottky barrier diode

Description

Silicon epitaxial Schottky barrier diode with an integrated guard ring for stress protection.

Intended for high speed switching, circuit protection and voltage clamping applications.

The diode is encapsulated in a SOD123 SMD plastic package.

Features

  • Low leakage current.
  • Low turn-on and high breakdown voltage.
  • Ultra-fast switching speed.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BAT56 Schottky barrier diode Preliminary specification File under Discrete Semiconductors, SC01 December 1993 Philips Semiconductors Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES • Low leakage current • Low turn-on and high breakdown voltage • Ultra-fast switching speed. DESCRIPTION Silicon epitaxial Schottky barrier diode with an integrated guard ring for stress protection. Intended for high speed switching, circuit protection and voltage clamping applications. The diode is encapsulated in a SOD123 SMD plastic package.
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