1N5817
FEATURES
- Low switching losses
- Fast recovery time
- Guard ring protected
- Hermetically sealed leaded glass package. APPLICATIONS
- Low power, switched-mode power supplies
- Rectifying
- Polarity protection. handbook, 4 columns
1N5817; 1N5818; 1N5819
DESCRIPTION
The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec TM(1) technology.
(1) Implotec is a trademark of Philips. k a
MAM218
Fig.1 Simplified outline (SOD81) and symbol.
1996 May 03
Philips Semiconductors
Product specification
Schottky barrier diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR 1N5817 1N5818 1N5819 VRSM non-repetitive peak reverse voltage 1N5817 1N5818 1N5819 VRRM repetitive peak reverse voltage 1N5817 1N5818 1N5819 VRWM crest working reverse voltage 1N5817 1N5818 1N5819 IF(AV) IFSM average forward current non-repetitive peak forward...
