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PHP191NQ06LT - N-channel TrenchMOS logic level FET

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features

  • Low conduction losses due to low on-state resistance.
  • Suitable for logic level gate drive sources 1.3.

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Datasheet Details

Part number PHP191NQ06LT
Manufacturer NXP Semiconductors
File Size 192.86 KB
Description N-channel TrenchMOS logic level FET
Datasheet download datasheet PHP191NQ06LT Datasheet

Full PDF Text Transcription

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PHP191NQ06LT N-channel TrenchMOS logic level FET Rev. 02 — 14 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for logic level gate drive sources 1.3 Applications „ DC-to-DC convertors „ General industrial applications „ Motors, lamps and solenoids „ Uninterruptible power supplies 1.4 Quick reference data Table 1.
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