Datasheet4U Logo Datasheet4U.com

PHB160NQ08T - N-channel TrenchMOS standard level FET

Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.

Features

  • s Standard level threshold s Very low on-state resistance. 1.3.

📥 Download Datasheet

Datasheet Details

Part number PHB160NQ08T
Manufacturer NXP Semiconductors
File Size 128.17 KB
Description N-channel TrenchMOS standard level FET
Datasheet download datasheet PHB160NQ08T Datasheet

Full PDF Text Transcription

Click to expand full text
PHP/PHB160NQ08T N-channel TrenchMOS™ standard level FET Rev. 01 — 28 January 2004 www.datasheet4u.com Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Standard level threshold s Very low on-state resistance. 1.3 Applications s Motors, lamps, solenoids s DC-to-DC converters s Uninterruptable power supplies s General industrial applications. 1.4 Quick reference data s VDS ≤ 75 V s Ptot ≤ 300 W s ID ≤ 75 A s RDSon ≤ 5.6 mΩ. 2.
Published: |