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PH3855L - N-channel TrenchMOS logic level FET

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.

Features

  • s Logic level threshold s Surface mounted package. 1.3.

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Datasheet Details

Part number PH3855L
Manufacturer NXP Semiconductors
File Size 173.71 KB
Description N-channel TrenchMOS logic level FET
Datasheet download datasheet PH3855L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PH3855L N-channel TrenchMOS™ logic level FET Rev. 01 — 26 January 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level threshold s Surface mounted package. 1.3 Applications s DC-to-DC converters s Motors, lamps, solenoids s General purpose power switching s 12 V and 24 V loads. 1.4 Quick reference data s VDS ≤ 55 V s RDSon ≤ 36 mΩ s ID ≤ 24 A s Qgd = 5.5 nC (typ). 2. Pinning information Table 1: Pin 1, 2, 3 4 mb Pinning Description source gate mounting base; connected to drain mb Simplified outline Symbol D G mbb076 S 1 2 3 4 Top view SOT669 (LFPAK) Philips Semiconductors w w w .
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