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BUK9Y14-40B - N-Channel MOSFET

Datasheet Summary

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features

  • Low conduction losses due to low on-state resistance.
  • Suitable for logic level gate drive sources.
  • Q101 compliant.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Datasheet Details

Part number BUK9Y14-40B
Manufacturer NXP Semiconductors
File Size 197.38 KB
Description N-Channel MOSFET
Datasheet download datasheet BUK9Y14-40B Datasheet
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BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for logic level gate drive sources „ Q101 compliant „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ Air bag „ Automotive transmission control „ Fuel pump and injection „ Automotive ABS systems „ Diesel injection systems „ Motors, lamps and solenoids 1.
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