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BUK953R2-40B
17 April 2014
TO -22 0
AB
N-channel TrenchMOS logic level FET
Product data sheet
1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
• • • •
AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
3. Applications
• • • •
12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
4. Quick reference data
Table 1.
BUK953R2-40B Datasheet
