BUK7Y07-30B
description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
- Low conduction losses due to low on-state resistance
- Q101 pliant
- Suitable for standard level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
- 12 V Loads
- Automotive systems
- General purpose power switch
- Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2
[1]
Min
- Typ
- Max Unit 30 75 105 V A W
Static characteristics RDSon VGS = 10 V; ID...
