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BUK7E4R3-75C - N-channel TrenchMOS standard level FET

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features

  • AEC Q101 compliant.
  • Suitable for standard level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Datasheet Details

Part number BUK7E4R3-75C
Manufacturer NXP Semiconductors
File Size 332.30 KB
Description N-channel TrenchMOS standard level FET
Datasheet download datasheet BUK7E4R3-75C Datasheet

Full PDF Text Transcription

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I2P AK BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 02 — 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  AEC Q101 compliant  Suitable for standard level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V, 24 V and 42 V loads  Automotive systems  General purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1.
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