BUK7535-55A
description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
- AEC Q101 pliant
- Low conduction losses due to low on-state resistance
- Suitable for standard level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
- 12 V and 24 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3
Ptot total power dissipation Tmb = 25 °C; see Figure 2 Static characteristics
RDSon drain-source on-state resistance
VGS = 10 V; ID = 20 A; Tj = 175 °C; see Figure 11; see Figure 12
VGS = 10...
