BUK7535-100A
Description
N-channel enhancement mode field-effect power transistor in a plastic package using Trench MOS™ technology, featuring very low on-state resistance. Product availability: BUK7535-100A in SOT78 (TO-220AB) BUK7635-100A in SOT404 (D2-PAK).
2. Features s s s s Trench MOS™ technology Q101 pliant 175 °C rated Standard level patible.
3. Applications c c s Automotive and general purpose power switching: x 12 V, 24 V and 42 V loads x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning
- SOT78 and SOT404, simplified outline and symbol Description gate (g) mb
Simplified outline
Symbol drain (d) source (s) mounting base; connected to drain (d) mb d g s
MBK106
MBB076
MBK116
1 2 3
SOT78 (TO-220AB)
SOT404 (D2-PAK)
Philips Semiconductors
BUK7535-100A; BUK7635-100A
..
Trench MOS™ standard level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A...
