BUK6213-30A
Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips General Purpose Automotive (GPA) Trench MOS™ technology.
1.2 Features s Low on-state resistance s 175 °C rated s Q101 pliant s Intermediate level patible.
1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching.
1.4 Quick reference data s EDS(AL)S ≤ 267 m J s ID ≤ 55 A s RDSon = 10 mΩ (typ) s Ptot ≤ 102 W.
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning
- SOT428 (D-PAK), simplified outline and symbol Simplified outline
[1]
Description gate (g) drain (d) source (s) mounting base; connected to drain (d)
Symbol d mb g s
MBB076
2 1 Top view 3
MBK091
SOT428 (D-PAK)
[1] It is not possible to make connection to pin 2 of the package.
Philips Semiconductors
Trench MOS™ Intermediate level FET
3. Ordering information
Table 2: Ordering information Package Name BUK6213-30A Description
Plastic single-ended surface...
